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january 2012 doc id 15584 rev 2 1/13 13 STW25N95K3 n-channel 950 v, 0.32 , 22 a, to-247 supermesh3? power mosfet features 100% avalanche tested extremely large avalanche performance gate charge minimized very low intrinsic capacitances zener-protected application switching applications description this supermesh3? power mosfet is the result of improvements applied to stmicroelectronics? supermesh? technology, combined with a new optimized vertical structure. this device boasts an extremely low on- resistance, superior dynamic performance and high avalanche capability, rendering it suitable for the most demanding applications. figure 1. internal schematic diagram type v dss r ds(on) max i d pw STW25N95K3 950 v < 0.36 22 a 400 w 1 2 3 to-247 d(2) g(1) s(3) am01476v1 table 1. device summary order code marking package packaging STW25N95K3 25n95k3 to-247 tube www.st.com
contents STW25N95K3 2/13 doc id 15584 rev 2 contents 1 electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . 6 3 test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 4 package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 5 revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
STW25N95K3 electrical ratings doc id 15584 rev 2 3/13 1 electrical ratings table 2. absolute maximum ratings symbol parameter value unit v gs gate- source voltage 30 v i d drain current (continuous) at t c = 25 c 22 a i d drain current (continuous) at t c = 100 c 13.9 a i dm (1) 1. pulse width limited by safe operating area. drain current (pulsed) 88 a p tot total dissipation at t c = 25 c 400 w i ar avalanche current, repetitive or not-repetitive (pulse width limited by t j max) 28 a e as single pulse avalanche energy (starting t j = 25 c, i d = i ar , v dd = 50 v) 450 mj dv/dt (2) 2. i sd 22 a, di/dt 100 a/s, peak v ds v (br)dss peak diode recovery voltage slope 5 v/ns v esd(g-s) g-s esd (hbm c=100 pf; r=1.5 k )6000v t j t stg operating junction temperature storage temperature -55 to 150 c table 3. thermal data symbol parameter value unit r thj-case thermal resistance junction-case max 0.31 c/w r thj-amb thermal resistance junction-ambient max 50 c/w t j maximum lead temperature for soldering purpose 300 c/w
electrical characteristics STW25N95K3 4/13 doc id 15584 rev 2 2 electrical characteristics (t case =25c unless otherwise specified). table 4. on /off states symbol parameter test conditions min. typ. max. unit v (br)dss drain-source breakdown voltage i d = 1 ma, v gs = 0 950 v i dss zero gate voltage drain current (v gs = 0) v ds = max rating v ds = max rating, t c =125 c 1 50 a a i gss gate-body leakage current (v ds = 0) v gs = 20 v 10 a v gs(th) gate threshold voltage v ds = v gs , i d = 150 a 3 4 5 v r ds(on) static drain-source on resistance v gs = 10 v, i d = 11 a 0.32 0.36 table 5. dynamic symbol parameter test conditions min. typ. max. unit g fs (1) 1. pulsed: pulse duration = 300 s, duty cycle 1.5% forward transconductance v ds = 15 v, i d = 11 a - 22 - s c iss c oss c rss input capacitance output capacitance reverse transfer capacitance v ds = 100 v, f = 1 mhz, v gs = 0 - 3680 246 2 - pf pf pf c o(tr) (2) 2. c oss eq. time related is defined as a constant equivalent capacitance giving the same charging time as c oss when v ds increases from 0 to 80% v dss equivalent capacitance time related v ds = 0 to 760 v, v gs = 0 - 198 - pf c o(er) (3) 3. c oss eq. energy related is defined as a constant equival ent capacitance giving the same stored energy as c oss when v ds increases from 0 to 80% v dss equivalent capacitance energy related v ds = 0 to 760 v, v gs = 0 - 278 - pf r g gate input resistance f=1 mhz open drain - 3 - q g q gs q gd total gate charge gate-source charge gate-drain charge v dd = 760 v, i d = 22 a, v gs = 10 v (see figure 16) - 105 23 57 - nc nc nc
STW25N95K3 electrical characteristics doc id 15584 rev 2 5/13 the built-in back-to-back zener diodes have specifically been designed to enhance not only the device?s esd capability, but also to make them safely absorb possible voltage transients that may occasionally be applied from gate to source. in this respect the zener voltage is appropriate to achieve an efficient and cost-effective intervention to protect the device?s integrity. these integrated zener diodes thus avoid the usage of external components. table 6. switching times symbol parameter test conditions min. typ. max unit t d(on) t r t d(off) t f turn-on delay time rise time turn-off-delay time fall time v dd = 475 v, i d = 11 a, r g = 4.7 , v gs = 10 v (see figure 15) - 39 29 97 59 - ns ns ns ns table 7. source drain diode symbol parameter test conditions min. typ. max unit i sd i sdm (1) 1. pulse width limited by safe operating area. source-drain current source-drain current (pulsed) - 22 88 a a v sd (2) 2. pulsed: pulse duration = 300 s, duty cycle 1.5% forward on voltage i sd = 22 a, v gs = 0 - 1.6 v t rr q rr i rrm reverse recovery time reverse recovery charge reverse recovery current i sd = 22 a, di/dt = 100 a/s v dd = 60 v, t j = 25 c (see figure 17) - 671 17 50 ns c a t rr q rr i rrm reverse recovery time reverse recovery charge reverse recovery current i sd = 22 a, di/dt = 100 a/s v dd = 60 v t j = 150 c (see figure 17) - 803 21 52 ns c a table 8. gate-source zener diode symbol parameter test conditions min. typ. max. unit bv gso gate-source breakdown voltage igs= 1 ma (open drain) 30 - - v
electrical characteristics STW25N95K3 6/13 doc id 15584 rev 2 2.1 electrical characteristics (curves) figure 2. safe operating area figure 3. thermal impedance figure 4. output characteristics figure 5. transfer characteristics figure 6. normalized bv dss vs temperature figure 7. static drain-source on resistance i d 100 10 1 0.1 0.1 1 100 v d s (v) 10 (a) oper a tion in thi s a re a i s limited b y m a x r d s (on) 10 s 100 s 1m s 10m s tj=150c tc=25c s inlge p u l s e am0 3 70 8 v1 i d 0 0 10 v d s (v) 20 (a) v g s = 10v 6v 7v 5 15 10 20 3 0 25 3 5 40 am0 3 709v1 i d 3 0 20 10 0 0 4 v g s (v) 8 (a) 2 6 10 40 12 14 16 v d s = 25 v am0 3 710v1 bv d ss t j (c) (norm) -50 50 0 0.600 0.700 0. 8 00 0.900 1.000 1.100 100 150 1.200 1. 3 00 am0 3 711v1 r d s (on) 0. 3 2 0. 3 0.2 8 0.26 2 6 i d (a) ( ) 4 8 0. 3 4 0. 3 6 0. 38 10 16 14 12 1 8 20 am0 3 71 3 v1
STW25N95K3 electrical characteristics doc id 15584 rev 2 7/13 figure 8. output capacitance stored energy figure 9. capacitance variations figure 10. gate charge vs gate-source voltage figure 11. normalized on resistance vs temperature figure 12. normalized gate threshold voltage vs temperature figure 13. maximum avalanche energy vs temperature e o ss 15 10 5 0 100 v d s (v) ( j) 400 20 200 3 00 25 3 0 500 600 3 5 40 45 700 8 00 0 am0 3 714v1 c 10000 1000 100 10 0.1 10 v d s (v) (pf) 1 100 ci ss co ss cr ss 1 1000 am0 3 712v1 v g s 6 4 2 0 0 5 q g (nc) (v) 20 8 10 15 10 v dd =760v i d =22a 25 12 0. 3 0.2 0.1 0 0.4 0.5 0.6 0.7 0. 8 0.9 am0 3 719v1 r d s (on) 2.0 1.5 0.5 0 0 t j (c) (norm) -50 50 100 150 1.0 2.5 3 .0 am0 3 715v1 v g s (th) 0. 8 0 0.60 0.40 0.20 -50 0 t j (c) (norm) 1.0 50 100 150 1.40 1.20 am0 3 716v1 e a s 0 40 t j (c) (mj) 20 100 60 8 0 0 50 100 150 200 120 140 250 3 00 3 50 400 450 am0 3 717v1 i ar =2 8 a
electrical characteristics STW25N95K3 8/13 doc id 15584 rev 2 figure 14. source-drain diode forward characteristics v s d 0 20 i s d (a) (v) 10 0. 3 0 0.40 0.50 0.60 0.70 0. 8 0 1.0 5 15 0.90 150c 25c -50c am0 3 71 8 v1
STW25N95K3 test circuits doc id 15584 rev 2 9/13 3 test circuits figure 15. switching times test circuit for resistive load figure 16. gate charge test circuit figure 17. test circuit for inductive load switching and diode recovery times figure 18. unclamped inductive load test circuit figure 19. unclamped inductive waveform figure 20. switching time waveform am0146 8 v1 v g s p w v d r g r l d.u.t. 2200 f 3 . 3 f v dd am01469v1 v dd 47k 1k 47k 2.7k 1k 12v v i =20v=v gmax 2200 f p w i g =con s t 100 100nf d.u.t. v g am01470v1 a d d.u.t. s b g 25 a a b b r g g fa s t diode d s l=100 h f 3 . 3 1000 f v dd am01471v1 v i p w v d i d d.u.t. l 2200 f 3 . 3 f v dd am01472v1 v (br)d ss v dd v dd v d i dm i d am0147 3 v1 v d s t on td on td off t off t f t r 90 % 10 % 10 % 0 0 90 % 90 % 10 % v g s
package mechanical data STW25N95K3 10/13 doc id 15584 rev 2 4 package mechanical data in order to meet environmental requirements, st offers these devices in different grades of ecopack ? packages, depending on their level of environmental compliance. ecopack ? specifications, grade definitions and product status are available at: www.st.com. ecopack is an st trademark. table 9. to-247 mechanical data dim. mm. min. typ. max. a 4.85 5.15 a1 2.20 2.60 b1.0 1.40 b1 2.0 2.40 b2 3.0 3.40 c 0.40 0.80 d 19.85 20.15 e 15.45 15.75 e 5.30 5.45 5.60 l 14.20 14.80 l1 3.70 4.30 l2 18.50 ? p 3.55 3.65 ? r 4.50 5.50 s 5.30 5.50 5.70
STW25N95K3 package mechanical data doc id 15584 rev 2 11/13 figure 21. to-247 drawing 0075 3 25_g
revision history STW25N95K3 12/13 doc id 15584 rev 2 5 revision history table 10. document revision history date revision changes 27-apr-2009 1 first release. 09-jan-2012 2 document status promoted from preliminary data to datasheet. updated section 4: package mechanical data .
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